Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs-GaAs- heterostructure to carrier-substrate
نویسندگان
چکیده
Development of lift-off technique AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process frontal ohmic contact n-type conductivity based on systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific resistance (2-5)·10 -6 Ω·cm 2 investigated. Analyzed was influence heterostructure forming IR light-emitting diodes parameters: minimum (1 mm square) series 0.16 Ω. Optical power 270 mW at current 1.5 A achieved. Keywords: heterostructure, diode, transfer carrier-substrate, Au--In- compound, contacts.
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ژورنال
عنوان ژورنال: ?????? ??????????? ??????
سال: 2023
ISSN: ['0044-4642', '1726-748X']
DOI: https://doi.org/10.21883/tp.2023.01.55451.166-22